IGBT Devices Tests and Parameters
The following tests are available, depending on the type of power analyzer, DUT, test type, and instrument option that you use.
Cies Test
Measures the Input Capacitance. Requires the N1272A Device Capacitance Selector SMU.
Coes Test
Measures the Output Capacitance. Requires the N1272A Device Capacitance Selector SMU.
Cres Test
Measures the Reverse transfer capacitance. Requires the N1272A Device Capacitance Selector SMU.
Ic-Vce Test
Measures Ic-Vce characteristics for 3-terminal IGBT devices. SMU pulse is used for the Collector-Emitter voltage output. The sweep scale is always linear.
Ic-Vge Test
Measures Ic-Vge characteristics for 3-terminal IGBT devices. SMU pulse is used for the Collector-Emitter voltage output. (Available only if you choose the H21 Instrument option in the Hardware Configuration dialog.)
Ic-Vge for Expanders Test (older versions of the PD1000A Control Software).
Measures Ic-Vge transfer characteristics for IGBT devices with multiple Vce values. (Available only if you choose the H51 or H71 Instrument option in the Hardware Configuration dialog.)
Diode If-Vf Test
Measures the forward bias voltage vs. current characteristics of the body (free-wheeling) diode. SMU voltage pulse is used for the forward bias output.
Diode Ir-Vr Test
Measures the reverse bias voltage vs. current characteristics of the body (free-wheeling) diode.
Rg, Cgg-Vg Test
Measures the internal gate resistance, Rg, of the device. The device must have a gate oxide. In IC-CAP and the PEMG software the gate resistance is calculated from the Cox, also known as Cgg or Cg. Cgg = Cgs + Cgd + Cgb. Requires the N1272A Device Capacitance Selector SMU.
Back to: Step 2. IV and CV Configure Tests and Test Settings
See also: FET Tests and Parameters